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LMG5200_15 Datasheet, PDF (7/23 Pages) Texas Instruments – GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage
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LMG5200
SNOSCY4A – MARCH 2015 – REVISED MARCH 2015
6.6 Typical Characteristics
All the curves are based on measurements made on a PCB design with dimensions of 3.2 inches (W) × 2.7 inches (L) ×
0.062 inch (T) and 4 copper layers of 2 oz.
The safe operating area (SOA) curves displays the temperature boundaries within an operating system by incorporating the
thermal resistance and system power loss. A buck converter is used for measuring the SOA. Figure 2 outlines the
temperature and airflow conditions required for a given load current. The area under the curve dictates the safe operating
area for different airflow conditions.
100
10
1
0.1
1
10
VDD = 5 V
100
Frequency (kHz)
No Load
1k
10k
D001
Figure 1. VDD Supply Current vs Switching Frequency
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
Source-to-Drain Voltage (V)
GaN third quadrant conduction.
D001
.
Figure 3. Source-to-Drain Current vs Source-to-Drain
Voltage
90
80
70
60
50
40
400 LFM
200 LFM
30
100 LFM
Natural convection
20
0
1
2
3
4
Output Current (A)
VIN = 48 V
VOUT = 5 V
5
6
D001
fSW = 1 MHz
Figure 2. Safe Operating Area
25
23
21
19
17
15
13
11
9
7
5
-40 -25 -10
5 20 35 50 65 80 95 110 125 140
Junction Temperature (°C)
D001
Figure 4. GaN FET On-Resistance vs Junction Temperature
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