DRV8701_15 Datasheet, PDF (8/42 Pages) Texas Instruments – DRV8701 Brushed DC Motor Full-Bridge Gate Driver

DRV8701
SLVSCX5B – MARCH 2015 – REVISED JULY 2015
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
I_DRIVE,SNK Peak sink current
I_HOLD
FET holding current
I_STRONG FET hold-off strong pulldown
R_IDRIVE < 1 kΩ to GND
R_IDRIVE = 33 kΩ ±5% to GND
R_IDRIVE = 200 kΩ ±5% to GND, or
R_IDRIVE < 1 kΩ to AVDD
R_IDRIVE > 500 ±5% kΩ to GND
R_IDRIVE = 68 kΩ ±5% to AVDD
Source current after t_DRIVE
Sink current after t_DRIVE
GHx
GLx
R_OFF
FET gate hold-off resistor
Pulldown GHx to SHx
Pulldown GLx to GND
CURRENT SHUNT AMPLIFIER AND PWM CURRENT CONTROL (SP, SN, SO, VREF)
V_VREF
VREF input voltage
A_V
Amplifier gain
V_OFF
I_SP
SO offset
SP input current
t_SET ⁽³⁾
Settling time to ±1%
C_SO ⁽³⁾
Allowable SO pin capacitance
t_OFF
PWM current regulation off-time
t_BLANK
PWM blanking time
PROTECTION CIRCUITS
For current internal chopping
50 < V_SP < 200 mV; V_SN = GND
10 < V_SP < 50 mV; V_SN = GND
V_SP = V_SN = GND
V_SP = 100 mV; V_SN = GND
V_SP = V_SN = GND to
V_SP = 100 mV, V_SN = GND
V_UVLO
VM undervoltage lockout
VM falling; UVLO report
VM rising; UVLO recovery
V_UVLO,HYS
t_UVLO
V_CPUV
V_{DS OCP}
VM undervoltage hysteresis
VM UVLO falling deglitch time
Charge pump undervoltage
Overcurrent protection trip level,
VDS of each external FET
Rising to falling threshold
VM falling; UVLO report
CPUV report
High-side FETs: VM – SHx
Low-side FETs: SHx – SP
V_{SP OCP}
Overcurrent protection trip level,
measured by sense amplifier
V_SP voltage with respect to GND
t_OCP
t_RETRY
T_TSD ⁽³⁾
T_HYS ⁽³⁾
Overcurrent deglitch time
Overcurrent retry time
Thermal shutdown temperature
Thermal shutdown hysteresis
V_{GS CLAMP} Gate drive clamping voltage
Die temperature, T_J
Die temperature, T_J
Positive clamping voltage
Negative clamping voltage
(2) Operational at VREF = 0 to 0.3 V, but accuracy is degraded
(3) Specified by design and characterization data
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MIN
0.3 ⁽²⁾
18
16
TYP
12.5
25
50
200
300
6
25
490
690
200
150
20
20
50
-40
25
2
5.4
5.6
100
10
VM + 2.8
0.8
1
0.8
1
4.5
3
150
20
10.5
–1
–0.7
MAX UNIT
mA
mA
mA
kΩ
AVDD V
22
V/V
24
250 mV
μA
1.5 µs
1 nF
µs
µs
5.8
V
5.9
mV
μs
V
V
V
µs
ms
°C
°C
13
V
–0.5
8
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