DRV8701_15 Datasheet, PDF (7/42 Pages) Texas Instruments – DRV8701 Brushed DC Motor Full-Bridge Gate Driver

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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES (VM, AVDD, DVDD)
VM
VM operating voltage
I_VM
I_VMQ
t_SLEEP
t_WAKE
t_ON
DVDD
VM operating supply current
VM sleep mode supply current
Sleep time
Wake-up time
Turn-on time
Internal logic regulator voltage
VM = 24 V; nSLEEP high
nSLEEP = 0
VM = 24 V
T_A = 25°C
T_A = 125°C⁽¹⁾
nSLEEP low to sleep mode
nSLEEP high to output change
VM > UVLO to output transition
External load 0 to 30 mA
AVDD
Internal logic regulator voltage
External load 0 to 30 mA
CHARGE PUMP (VCP, CPH, CPL)
VCP
VCP operating voltage
VM = 12 V; I_VCP = 0 to 12 mA
VM = 8 V; I_VCP = 0 to 10 mA
VM = 5.9 V; I_VCP = 0 to 8 mA
VM > 12 V
I_VCP
Charge pump current capacity
8 V < VM < 12 V
5.9 V < VM < 8 V
f_VCP ⁽¹⁾
Charge pump switching frequency VM > UVLO
CONTROL INPUTS (PH, EN, IN1, IN2, nSLEEP)
V_IL
Input logic low voltage
V_IH
Input logic high voltage
V_HYS
Input logic hysteresis
I_IL
Input logic low current
I_IH
Input logic high current
R_PD
Pulldown resistance
t_PD
Propagation delay
CONTROL OUTPUTS (nFAULT, SNSOUT)
V_IN = 0 V
V_IN = 5 V
PH/EN, IN1/IN2 to GHx/GLx
V_OL
Output logic low voltage
I_O = 2 mA
I_OZ
Output high impedance leakage V_IN = 5 V
FET GATE DRIVERS (GH1, GH2, SH1, SH2, GL1, GL2)
V_GHS
V_GLS
High-side VGS gate drive (gate-to-
source)
Low-side VGS gate drive (gate-to-
source)
VM > 12 V; V_GHS with respect to SHx
VM = 8 V; V_GHS with respect to SHx
VM = 5.9 V; V_GHS with respect to SHx
VM > 12 V
VM = 5.9 V
t_DEAD
Output dead time
Observed t_DEAD depends on IDRIVE
setting
t_DRIVE
Gate drive time
I_DRIVE,SRC Peak source current
R_IDRIVE < 1 kΩ to GND
R_IDRIVE = 33 kΩ ±5% to GND
R_IDRIVE = 200 kΩ ±5% to GND, or
R_IDRIVE < 1 kΩ to AVDD
R_IDRIVE > 500 kΩ ±5% to GND
R_IDRIVE = 68 kΩ ±5% to AVDD
(1) Specified by design and characterization data
DRV8701
SLVSCX5B – MARCH 2015 – REVISED JULY 2015
MIN
TYP
MAX UNIT
5.9
45 V
6
9.5 mA
9
15
μA
14
25
100 μs
1 ms
1 ms
3.0
3.3
3.5 V
4.4
4.8
5.2 V
20.5
21.5
22.5
13.5
14.4
15 V
9.4
9.9
10.4
12
10
mA
8
200
400
700 kHz
0.8 V
1.5
V
100
mV
–5
5 μA
78 μA
64
115
173 kΩ
500
ns
0.1 V
–2
2 μA
8.5
9.5
10.5
5.5
6.4
7V
3.5
4.0
4.5
8.5
9.3
10.5
V
3.9
4.3
4.9
380
ns
2.5
μs
6
12.5
25
mA
100
150
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