MB84VD22386EJ Datasheet, PDF (59/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90
• Data Retention Timing
3.1 V
2.7 V
VCCs
tDRS
∆V/∆t
∆V/∆t
tDRR
2.3 V
CE2s
CE1s
VCCs ≥ 0.2 V or VIH ⁽*⁾ Min
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
* : 2.0 V ≤ VIH ≤ VCCS + 3 V
s PIN CAPACITANCE
Parameter
Symbol
Condition
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP/ACC Pin Capacitance
CIN
COUT
CIN2
CIN3
Note: Test conditions TA = +25°C, f = 1.0 MHz
VIN = 0 V
VOUT = 0 V
VIN = 0 V
VIN = 0 V
Value
Unit
Typ
Max
11
14
pF
12
16
pF
14
16
pF
21.5
26
pF
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of package are created acute angles.
s CAUTION
• The high voltage (VID) cannot apply to address pins and control pins except RESET.
Exception is when autoselect and sector protect function are used. Then the high voltage (VID) can be applied
to RESET.
• Without the high voltage (VID) , sector protection can be achieved by using “Extended Sector Group Protection”
command.
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