MB84VD22386EJ Datasheet, PDF(34/63 Page) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

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MB84VD22386EJ Datasheet, PDF (34/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

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MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90

(Continued)

Parameter

Symbol

Value

Unit

JEDEC Standard Min Typ Max

VCCf Setup Time

tVCS

â Âµs

Voltage Transition Time *2

tVLHT

â Âµs

Rise Time to VID *2

tVIDR

500 â

â ns

Rise Time to VACC

tVACCR

500 â

â ns

Recover Time from RY/BY

tRB

â ns

RESET Pulse Width

tRP

500 â

â ns

Delay Time from Embedded Output Enable

tEOE

â â 85 ns

RESET Hold Time Before Read

tRH

200 â

â ns

Program/Erase Valid to RY/BY Delay

tBUSY

â â 90 ns

Erase Time-out Time *3

tTOW

â Âµs

Erase Suspend Transition Time *4

tSPD

â â 20 Âµs

*1: This does not include the preprogramming time.

*2: This timing is for Sector Protection Operation.

*3: The time between writes must be less than âtTOWâ otherwise that command will not be accepted and erasure will

start. A time-out or âtTOWâ from the rising edge of last CEf or WE whichever happens first will initiate the execution

of the Sector Erase command(s).

*4: When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum

of âtSPDâ to suspend the erase operation.

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