MB84VD22386EJ Datasheet, PDF (29/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90
(Continued)
Parameter
Symbol
Conditions
Value
Unit
Min Typ Max
Input Low Level
VIL
—
–0.3 — 0.4 V
Input High Level
VIH
—
2.3
— VCC+0.3 V
Voltage for Autoselect and
Sector Protection (RESET) *⁴
VID
—
11.5 — 12.5 V
Voltage for WP/ACC Sector
Protection/Unprotection and VACC
—
Program Acceleration
8.5 9.0 9.5 V
FCRAM Output Low Level
VOL VCCs = VCCs Min, IOL =1.0 mA
—
— 0.4 V
FCRAM Output High Level
VOH VCCs = VCCs Min, IOH = –0.5 mA
2.1
—
—
V
Flash Output Low Level
VOL VCCf = VCCf Min, IOL = 4.0 mA
—
— 0.45 V
Flash Output High Level
VOH VCCf = VCCf Min, IOH = –0.1 mA
VCCf–
0.4
—
—
V
Low Vcc Lock-Out
Voltage
VLKO
—
2.3 — 2.5 V
*1: The ICC current listed includes both the DC operating current and the frequency dependent component.
*2: ICC active while Embedded Algorithm (program or erase) is in progress.
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: Applicable for only VCC applying.
*5: Embedded Algorithm (program or erase) is in progress. (@5MHz)
*6: ISB2s depends on VIN cycle time. Refer to “s APPENDIX”.
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