MB84VD22386EJ Datasheet, PDF (33/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90
• Erase/Program Operations Characteristics (Flash)
Parameter
Symbol
Value
Unit
JEDEC Standard Min Typ Max
Write Cycle Time
tAVAV
tWC
85
—
— ns
Address Setup Time (WE to Addr.)
tAVWL
tAS
0
—
— ns
Address Setup Time to CEf Low During Toggle Bit Polling —
tASO
15
—
— ns
Address Hold Time (WE to Addr.)
tWLAX
tAH
45
—
— ns
Address Hold Time from CEf or OE High During Toggle
Bit Polling
—
tAHT
0
—
— ns
Data Setup Time
tDVWH
tDS
35
—
— ns
Data Hold Time
tWHDX
tDH
0
—
— ns
Output Enable Setup Time
—
tOES
0
—
— ns
Read
0
—
— ns
Output Enable Hold Time
—
tOEH
Toggle and Data Polling
10
—
— ns
CEf High During Toggle Bit Polling
—
tCEPH
20
—
— ns
OE High During Toggle Bit Polling
—
tOEPH
20
—
— ns
Read Recover Time Before Write (OE to CEf)
tGHEL
tGHEL
0
—
— ns
Read Recover Time Before Write (OE to WE)
tGHWL
tGHWL
0
—
— ns
WE Setup Time (CEf to WE)
tWLEL
tWS
0
—
— ns
CEf Setup Time (WE to CEf)
tELWL
tCS
0
—
— ns
WE Hold Time (CEf to WE)
tEHWH
tWH
0
—
— ns
CEf Hold Time (WE to CEf)
tWHEH
tCH
0
—
— ns
Write Pulse Width
tWLWH
tWP
35
—
— ns
CEf Pulse Width
tELEH
tCP
35
—
— ns
Write Pulse Width High
tWHWL
tWPH
30
—
— ns
CEf Pulse Width High
tEHEL
tCPH
30
—
— ns
Word Programming Operation
tWHWH1
tWHWH1
— 16 — µs
Sector Erase Operation *¹
tWHWH2
tWHWH2
—
1
—s
(Continued)
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