MB84VD22386EJ Datasheet, PDF (25/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90
Command
Sequence
Flash Memory Command Definitions
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Addr. Data
Second Bus
Write Cycle
Addr. Data
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset *¹
1 XXXh F0h —
—
—
———————
Read/Reset *¹
3 555h AAh 2AAh 55h 555h F0h RA RD — — — —
Autoselect
3
555h AAh 2AAh 55h
(BA)
555h
90h
—
——
———
Program
4 555h AAh 2AAh 55h 555h A0h PA PD — — — —
Chip Erase
6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h 555h 10h
Sector Erase
6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h SA 30h
Sector Erase Suspend 1
BA B0h —
—
—
———————
Sector Erase Resume 1
BA 30h —
—
—
———————
Program Suspend
1
BA B0h —
—
—
———————
Program Resume
1
BA 30h —
—
—
———————
Set to Fast Mode
3 555h AAh 2AAh 55h 555h 20h — — — — — —
Fast Program *²
2 XXXh A0h PA PD
—
———————
Reset from Fast Mode
*²
2
BA 90h XXXh F0h*⁶
—
———————
Extended Sector
Group Protection *³
4 XXXh 60h SPA 60h SPA 40h SPA SD — — — —
Query *⁴
Hi-ROM Entry
Hi-ROM Program *⁵
Hi-ROM Erase *⁵
Hi-ROM Exit *⁵
1
55h 98h —
—
—
———————
3 555h AAh 2AAh 55h 555h 88h — — — — — —
4 555h AAh 2AAh 55h 555h A0h PA PD — — — —
6 555h AAh 2AAh 55h 555h 80h 555h AAh 2AAh 55h HRA 30h
4
555h AAh 2AAh
55h
(HRBA)
555h
90h
XXXh
00h
—
———
*1: Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*2: This command is valid during Fast Mode.
*3: This command is valid while RESET=VID.
*4: The valid Address is A6 to A0.
*5: This command is valid during Hi-ROM mode.
*6: The data “00h” is also acceptable.
Notes: Address bits A20 to A11 = X = “H” or “L” for all address commands except for Program Address (PA),
Sector Address (SA), and Bank Address (BA).
Bus operations are defined in “s DEVICE BUS OPERATION”.
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the write pulse.
SA = Address of the sector to be erased. The combination of A20, A19, A18, A17, A16, A15, A14, A13, and A12 will
uniquely select any sector.
BA = Bank address (A20 to A15)
SPA = Sector group address to be protected. Set sector group address (SPA) and (A6, A1, A0) = (0, 1, 0).
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