MB84VD22386EJ Datasheet, PDF (2/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50212-3E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
32M (×16) FLASH MEMORY &
16M (×16) SRAM Interface FCRAM
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V for FCRAM
• Power Supply Voltage of 2.7 V to 3.3 V for Flash
• High Performance
85 ns maximum access time (Flash)
85 ns maximum access time (FCRAM)
• Operating Temperature
–30 °C to +85 °C
• Package 71-ball BGA
s PRODUCT LINE-UP
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
Flash Memory
VCCf* = 2.7 to 3.3
85
85
35
*: Both VCCf and VCCs must be the same level when either part is being accessed.
s PACKAGE
71-ball plastic BGA
(Continued)
FCRAM
VCCs* = 2.7 to 3.1
85
85
50
(BGA-71P-M02)
Note : These guarantee both FCRAM and Flash at 85 ns Access Cycle.