MB84VD22386EJ Datasheet, PDF (58/63 Pages) SPANSION – 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM

MB84VD22386/387/388EJ-85/90/MB84VD22396/397/398EJ-85/90
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min
—
—
—
100,000
Value
Typ
1
16
—
—
Unit
Max
Remarks
10
s Excludes programming time prior to erasure
360
µs Excludes system-level overhead
200
s Excludes system-level overhead
— cycle
s DATA RETENTION CHARACTERISTICS (FCRAM)
Parameter
Symbol
Conditions
Min
VCCS Data Retention Supply
Voltage
VDR
CE1s = CE2s ≥ VCCs – 0.2 V or,
CE1s = CE2s = VIH
2.3
VCCS Data Retention Supply
Current
2.3 V ≤ VCCs ≤ 2.7 V,
IDR
VIN = VIH * or VIL
—
CE1s = CE2s = VIH * , IOUT=0 mA
2.3 V ≤ VCCs ≤ 2.7 V,
IDR1
VIN ≤ 0.2 V or VIN ≥ VCCs – 0.2 V,
CE1s = CE2s ≥ VCCs – 0.2 V,
—
IOUT=0 mA
Data Retention Setup Time
tDRS
2.7 V ≤ VCCs ≤ 3.1 V
at data retention entry
0
Data Retention Recovery Time
tDRR
2.7 V ≤ VCCs ≤ 3.1 V
after data retention
90
VCCS Voltage Transition Time ∆V/∆t
—
0.5
*: 2.0 V ≤ VIH ≤ VCCs + 0.3 V
Value
Typ
—
0.5
—
—
—
—
Max
3.1
1
70
—
—
—
Unit
V
mA
µA
ns
ns
V/µs
57