S1003 Datasheet, PDF (11/42 Pages) Seiko Instruments Inc – MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)

MANUAL RESET BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) HIGH-ACCURACY VOLTAGE DETECTOR
Rev.1.0_00
S-1003 Series
„ Electrical Characteristics
1. Nch open-drain output product
Table 10
(Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage^*1 −V_DET
1.2 V ≤ −V_DET < 2.2 V
2.2 V ≤ −V_DET ≤ 5.0 V
−V_DET(S)
− 0.022
−V_DET(S)
−V_DET(S)
+ 0.022
V
1
−V_DET(S)
× 0.99
−V_DET(S)
−V_DET(S)
× 1.01
V
1
Hysteresis width
V_HYS
−
−V_DET
× 0.03
−V_DET
× 0.05
−V_DET
× 0.07
V
1
Current consumption I_SS
Operation voltage
V_DD
Output current
I_OUT
V_DD = −V_DET(S) + 1.0 V
−
Output transistor
V_DD = 0.95 V
Nch
V_DS^*2 = 0.5 V
MR pin active
V_DD = 1.2 V
V_DD = 2.4 V
V_DD = 4.8 V
Output transistor
−
0.50 0.90
μA
2
0.95
−
10.0
V
1
0.59 1.00
−
mA 3
0.73 1.33
−
mA 3
1.47 2.39
−
mA 3
1.86 2.50
−
mA 3
Leakage current
Delay time^*3
Detection voltage
temperature
coefficient^*4
I_LEAK
t_D
Nch
V_DD = 10.0 V, V_OUT = 10.0 V
MR pin non-active
C_D = 4.7 nF
Δ−V_DET
ΔTa • −V_DET
Ta = −40°C to +85°C
−
−
0.08
μA
3
8.5
10.0 11.5
ms 4
−
±100 ±350 ppm/°C 1
MR pin
input voltage "H"
V_MRH
NA type
(MR pin logic active "L")
NB type
(MR pin logic active "H")
V_DD
− 0.3
−
1.2
−
−
V
6
−
V
6
MR pin
input voltage "L"
V_MRL
NA type
(MR pin logic active "L")
NB type
(MR pin logic active "H")
−
−
V_DD
− 1.2
V
6
−
−
0.3
V
6
MR pin
input resistance
R_MR
−
0.5
1.0
1.6
MΩ 6
*1. −V_DET: Actual detection voltage value, −V_DET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3 or Table 4.)
*2. V_DS: Drain-to-source voltage of the output transistor
*3. The time period from when the pulse voltage of 0.95 V → −V_DET(S) + 1.0 V is applied to the VDD pin to when V_OUT
reaches V_DD × 0.9, after the output pin is pulled up to V_DD by the resistance of 100 kΩ.
*4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − V_DET
ΔTa
[mV/°C]^*1 = −VDET(S) (typ.)[V]^*2 ×
Δ − V_DET
ΔTa • −V_DET
[ppm/°C]^*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
11