K4F661612B Datasheet, PDF (7/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
RAS to W delay time
Column Address to W delay time
Fast Page mode cycle time
Fast Page mode read-modify-write cycle time
RAS pulse width (Fast page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
tRC
tRWC
tRAC
tCAC
tAA
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tPC
tPRWC
tRASP
tCPA
tOEA
tOED
tOEH
-45
Min Max
85
120
50
17
28
50 10K
17 10K
17
50
28
37
72
48
36
75
50 200K
31
17
17
17
-50
Min Max
95
138
55
18
30
55 10K
18 10K
18
55
30
41
78
53
40
81
55 200K
35
18
18
18
-60
Min Max
115
160
65
20
35
65 10K
20 10K
20
65
35
43
88
58
45
90
65 200K
40
20
18
20
( Note 11 )
Units
Note
ns
ns
ns 3,4,10,12
ns
3,4,5,12
ns
3,10,12
ns
ns
ns
ns
ns
ns
7
ns
7
ns
7
ns
ns
ns
ns
3
ns
ns
ns