K4F661612B Datasheet, PDF (4/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
K4F661612B
Max
-45
100
ICC1
Don′t care
-50
90
-60
80
ICC2
Normal
L
Don′t care
2
2
-45
100
ICC3
Don′t care
-50
90
-60
80
-45
70
ICC4
Don′t care
-50
60
-60
50
ICC5
Normal
L
Don′t care
500
300
-45
100
ICC6
Don′t care
-50
90
-60
80
ICC7
L
Don′t care
400
ICCS
L
Don′t care
400
K4F641612B
130
120
110
2
2
130
120
110
80
70
60
500
300
130
120
110
400
400
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
W, OE=VIH, Address=Don′t care DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.