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K4F661612B Datasheet, PDF (12/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
K4F661612B,K4F641612B
UPPER BYTE READ CYCLE
NOTE : DIN = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRC
tRAS
tCRP
tRCD
tCSH
tRSH
tCAS
tCRP
tRAD
tASR tRAH
ROW
ADDRESS
tASC
tCAH
COLUMN
ADDRESS
tRAL
tRCS
tAA
tOEA
OPEN
tRAC
OPEN
tCAC
tCLZ
CMOS DRAM
tRP
tCRP
tRPC
tRRH
tRCH
tOFF
tOEZ
DATA-OUT
Don′t care
Undefined