K4F661612B Datasheet, PDF(20/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612B Datasheet, PDF (20/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612B,K4F641612B

LOWER-BYTE READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VI/OH -

VI/OL -

DQ8 ~ DQ15

VI/OH -

VI/OL -

tCRP

tRAS

tRWC

tRP

tRPC

tCRP

tRCD

tRAD

tASR tRAH

tASC tCAH

ROW

ADDR

COLUMN

ADDRESS

tRSH

tCAS

tCSH

tAWD

tCWD

tRWD

tOEA

tRWL

tCWL

tWP

tCLZ

tCAC

tAA

tRAC

tOED

tOEZ

VALID

DATA-OUT

tDS tDH

VALID

DATA-IN

OPEN

Donâ²t care

Undefined

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