K4F661612B Datasheet, PDF (24/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
FAST PAGE MODE UPPER BYTE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
tCRP
tRASP
tCSH
tRCD
tPC
tCP
tCAS
¡ó
tPC
tCP
tCAS
tRHCP
tPC
tCP
tCAS
tCAS
tRP
tRPC
VIH -
LCAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRAD
tRAH tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tASC tCAH
COLUMN
ADDRESS
tRAL
tASC tCAH tASC tCAH
COLUMN
ADDR
COLUMN
ADDRESS
tRPC
VIH -
W
VIL -
VIH -
OE
VIL -
tRCS
tRCH
tRCS
tRCH
tRCS
tRCH
tRCS
tRCH
tRRH
tAA
tOEA
tCAC
tAA
tCPA
tOEA
tCAC
tAA
tCPA
tOEA
tCAC
tAA
tCPA
tOEA
DQ0 ~ DQ7
VOH -
VOL -
OPEN
DQ8 ~ DQ15
VOH -
VOL -
tCAC
tRAC
tCLZ
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
Don′t care
Undefined