K4F661612B Datasheet, PDF(17/35 Page) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612B Datasheet, PDF (17/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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K4F661612B,K4F641612B

LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : DOUT = OPEN

VIH -

RAS

VIL -

VIH -

UCAS

VIL -

VIH -

LCAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ7

VIH -

VIL -

DQ8 ~ DQ15

VIH -

VIL -

tCRP

tRC

tRAS

tCRP

tRCD

tRAD

tASR

tRAH

tASC

ROW

ADDRESS

tCSH

tRSH

tCAS

tCAH

COLUMN

ADDRESS

tRAL

tCWL

tRWL

tWP

tOED

tOEH

tDS

tDH

DATA-IN

CMOS DRAM

tRP

tRPC

tCRP

Donâ²t care

Undefined

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