K4F661612B Datasheet, PDF (25/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
tRASP
¡ó
tRHCP
tCRP
tRCD
tPC
tCAS
tCRP
tRCD
tPC
tCAS
tASR
tRAD
tRAH
tCSH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tPC
tCP
tCP
tCAS
tRSH
tCAS
¡ó
tPC
tCP
tCP
tCAS
tRSH
tCAS
¡ó
tRAL
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
VIH -
W
VIL -
tWCS tWCH
tWP
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
tRP
tCRP
VIH -
OE
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
VIH -
VIL -
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
¡ó
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
tDS tDH
VALID
DATA-IN
Don′t care
Undefined