K4F661612B Datasheet, PDF (5/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Min
Input capacitance [A0 ~ A12]
CIN1
-
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
Output capacitance [DQ0 - DQ15]
CDQ
-
CMOS DRAM
Max
Units
5
pF
7
pF
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
tDS
tDH
80
115
45
12
23
0
0
13
1
50
25
45 10K
12
45
12 10K
18
33
13
22
5
0
8
0
8
23
0
0
0
8
8
13
12
0
10
-50
Min Max
90
133
50
13
25
0
0
13
1
50
30
50 10K
13
50
13 10K
20
37
15
25
5
0
10
0
10
25
0
0
0
10
10
15
13
0
10
-60
Min Max
110
153
60
15
30
0
0
13
1
50
40
60 10K
15
60
15 10K
20
45
15
30
5
0
10
0
10
30
0
0
0
10
10
15
15
0
10
Units Note
ns
ns
ns
3,4,10
ns
3,4,5
ns
3,10
ns
3
ns
6
ns
2
ns
ns
ns
ns
ns
ns
4
ns
10
ns
ns
ns
ns
13
ns
13
ns
ns
ns
8
ns
8
ns
ns
ns
ns
16
ns
9,19
ns
9,19