K4F661612B Datasheet, PDF (30/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tCSH
tRASP
tCRP
VIH -
UCAS
VIL -
tCRP
tRCD
tPRWC
tCP
tCAS
tRSH
tCAS
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
tASR
tRAD
tRAH
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAH
tCWD
tAWD
tRWD
tOEA
tCWL
tASC
COL.
ADDR
tCAH
tRCS
tWP
tRAL
tRWL
tCWL
tWP
tCWD
tAWD
tCPWD
tOEA
tRP
tCRP
tRPC
DQ0 ~ DQ7
VI/OH -
VI/OL -
OPEN
DQ8 ~ DQ15
VI/OH -
VI/OL -
tCAC
tOED
tAA
tRAC
tOEZ
tDH
tDS
tCAC
tOED
tAA
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined