K4F661612B Datasheet, PDF (6/35 Pages) Samsung semiconductor – 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

K4F661612B,K4F641612B
AC CHARACTERISTICS (Continued)
Parameter
Refresh period (Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Fast Page mode cycle time
Fast Page mode read-modify-write cycle time
CAS precharge time (Fast page cycle)
RAS pulse width (Fast page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
CMOS DRAM
Symbol
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCPWD
tCSR
tCHR
tRPC
tCPA
tPC
tPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tOEZ
tOEH
tWTS
tWTH
tWRP
tWRH
tRASS
tRPS
tCHS
-45
Min Max
64
128
0
32
67
43
48
5
10
5
26
31
70
9
45 200K
28
12
12
0
13
12
10
15
10
10
100
80
-50
-50
Min Max
64
128
0
36
73
48
53
5
10
5
30
35
76
10
50 200K
30
13
13
0
13
13
10
15
10
10
100
90
-50
-60
Min Max
64
128
0
38
83
53
60
5
10
5
35
40
85
10
60 200K
35
15
13
0
13
15
10
15
10
10
100
110
-50
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Note
7
7,15
7
7
17
18
3
14
6
11
11
20,21,22
20,21,22
20,21,22