K4T51043QE Datasheet, PDF (6/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification

K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
3.2 x8 package pinout (Top View) : 60ball FBGA Package
1
2
3
7
8
9
VDD
DQ6
VDDQ
NU/
RDQS
VSS
A
VSSQ
DM/
RDQS
B
DQ1
VDDQ C
DQ4
VSSQ
DQ3
D
VDDL _VREF
VSS
E
CKE
WE
F
NC
BA0
BA1
G
A10/AP
A1
H
VSS
A3
A5
J
A7
A9
K
VSSQ DQS VDDQ
DQS VSSQ
VDDQ DQ0
DQ7
VDDQ
DQ2
VSSQ
DQ5
VSSDL CK
RAS
CK
VDD
ODT
CAS
CS
A2
A0
VDD
A6
A4
A11
A8
VSS
VDD
A12
NC
L
NC
A13
Note :
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in
function and timing to strobe pair DQS & DQS and input masking function
is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
123456789
A
+ ++
B
+ ++
C
+ ++
D
+ ++
E
+ ++
F₊
+ ++
G
+ ++
+
H₊
+ ++
J
+ ++
+
K₊
+ ++
L
+ ++
+
6 of 45
Rev. 1.8 July 2007