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| K4T51043QE Datasheet, PDF (31/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification | |||
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K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
VDDQ
tDS tDH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
dc to VREF
region
nominal
slew rate
VIL(dc) max
VIL(ac) max
tDS tDH
nominal
slew rate
VSS
Hold Slew Rate
Rising Signal =
VREF(dc) - Vil(dc)max
âTR
âTR
âTF
Hold Slew Rate
Falling Signal =
Vih(dc)min - VREF(dc)
âTF
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
31 of 45
Rev. 1.8 July 2007
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