K4T51043QE Datasheet, PDF (34/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification

K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
9. tIS and tIH (input setup and hold) derating
Table 4 - Derating values for DDR2-400, DDR2-533
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
Command/
0.8
Address Slew
rate(V/ns)
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
∆tIS, ∆tIH Derating Values for DDR2-400, DDR2-533
CK, CK Differential Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
+187
+94
+217
+124
+247
+154
+179
+89
+209
+119
+239
+149
+167
+83
+197
+113
+227
+143
+150
+75
+180
+105
+210
+135
+125
+45
+155
+75
+185
+105
+83
+21
+113
+51
+143
+81
0
0
+30
+30
+60
+60
-11
-14
+19
+16
+49
+46
-25
-31
+5
-1
+35
+29
-43
-54
-13
-24
+17
+6
-67
-83
-37
-53
-7
-23
-110
-125
-80
-95
-50
-65
-175
-188
-145
-158
-115
-128
-285
-292
-255
-262
-225
-232
-350
-375
-320
-345
-290
-315
-525
-500
-495
-470
-465
-440
-800
-708
-770
-678
-740
-648
-1450
-1125
-1420
-1095
-1390
-1065
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
34 of 45
Rev. 1.8 July 2007