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| K4T51043QE Datasheet, PDF (33/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification | |||
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K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
VDDQ
tDS tDH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
VIL(dc) max
dc to VREF
region
tangent
line
VIL(ac) max
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(dc) - Vil(dc)max ]
âTR
HFoalldlinSgleSwigRnaalte=
tangent line [ Vih(dc)min - VREF(dc) ]
âTF
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
33 of 45
Rev. 1.8 July 2007
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