K4T51043QE Datasheet, PDF (27/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification

K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
DQS
Note1
V_DDQ
V_IH(ac) min
V_IH(dc) min
V_REF(dc)
V_IL(dc) max
V_IL(ac) max
V_SS
V_DDQ
tDS tDH
V_IH(ac) min
VREF to ac
region
V_IH(dc) min
V_REF(dc)
V_IL(dc) max
nominal slew
rate
V_IL(ac) max
tDS tDH
nominal
slew rate
VREF to ac
region
V_SS
∆TF
Setup Slew Rate= ^{VREF(dc) - Vil(ac)max}
Falling Signal
∆TF
∆TR
SeRtiuspinSgleSwignRaalte=
Vih(ac)min - V_REF(dc)
∆TR
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
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Rev. 1.8 July 2007