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K4T51043QE Datasheet, PDF (13/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification
K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
7.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°C
1, 2
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
standard.
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
7.3 Input DC Logic Level
Symbol
VIH(DC)
VIL(DC)
Parameter
DC input logic high
DC input logic low
Min.
VREF + 0.125
- 0.3
Max.
VDDQ + 0.3
VREF - 0.125
Units
V
V
Notes
7.4 Input AC Logic Level
Symbol
VIH (AC)
VIL (AC)
Parameter
AC input logic high
AC input logic low
DDR2-400, DDR2-533
Min.
Max.
VREF + 0.250
-
-
VREF - 0.250
DDR2-667, DDR2-800
Min.
Max.
VREF + 0.200
VREF - 0.200
Units
V
V
7.5 AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
VREF
Input reference voltage
0.5 * VDDQ
V
1
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Note :
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC)
max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative
transitions.
VSWING(MAX)
delta TF
delta TR
Falling Slew =
VREF - VIL(AC) max
delta TF
Rising Slew =
< AC Input Test Signal Waveform >
VDDQ
VIH(AC) min
VIH(DC) min
VREF
VIL(DC) max
VIL(AC) max
VSS
VIH(AC) min - VREF
delta TR
13 of 45
Rev. 1.8 July 2007