K4T51043QE Datasheet, PDF (37/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification

K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
CK
CK
V_DDQ
V_IH(ac) min
V_IH(dc) min
V_REF to ac
region
V_REF(dc)
tIS
tIH
nominal
line
tangent
line
tIS tIH
tangent
line
V_IL(dc) max
V_IL(ac) max
nominal
line
V_SS
∆TF
V_REF to ac
region
∆TR
Setup Slew Rate= ^{tangent line[Vih(ac)min - VREF(dc)]}
Rising Signal
∆TR
SFetaullpinSgleSwignRaalte=
tangent line[V_REF(dc) - Vil(ac)max]
∆TF
Figure 14 - IIIustration of tangent line for tIS
37 of 45
Rev. 1.8 July 2007