K4T51043QE Datasheet, PDF (11/45 Pages) Samsung semiconductor – 512Mb E-die DDR2 SDRAM Specification

K4T51043QE
K4T51083QE
K4T51163QE
5.0 DDR2 SDRAM Addressing
512Mb
Configuration
128Mb x4
64Mb x 8
# of Banks
4
4
Bank Address
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Banks
Bank Address
Auto precharge
Row Address
Column Address
64Mb x4
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9,A11
32Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
1Gb
Configuration
# of Banks
Bank Address
Auto precharge
Row Address
Column Address
256Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9,A11
128Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
2Gb
Configuration
# of Banks
Bank Address
Auto precharge
Row Address
Column Address
512Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9,A11
256Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
4Gb
Configuration
# of Banks
Bank Address
Auto precharge
Row Address
Column Address/page size
1 Gb x4
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9,A11
512Mb x 8
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
DDR2 SDRAM
32Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
16Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A8
64Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
128Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
256Mb x16
8
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
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Rev. 1.8 July 2007