RX23T Datasheet, PDF (87/98 Pages) Renesas Technology Corp – 40-MHz 32-bit RX MCUs, built-in FPU, 65.6 DMIPS

RX23T Group
5. Electrical Characteristics
Table 5.39 ROM (Flash Memory for Code Storage) Characteristics (3): Middle-Speed Operating Mode
Conditions: VCC = 2.7 V to 5.5 V, AVCC0 = VREFH0 = VCC to 5.5 V, VSS = AVSS0 = VREFL0 = 0 V, T_a = –40 to +105°C
Temperature range for the programming/erasure operation: T_a = –40 to +85°C
Item
Programming time
Erasure time
8-byte
2-Kbyte
128-Kbyte
(when block
erase
command
used)
Symbol
t_P8
t_E2K
FCLK = 1 MHz
Min.
Typ.
Max.
—
152.0 1367.0
—
8.8
279.7
—
239.8 5114.7
FCLK = 8 MHz
Unit
Min.
Typ.
Max.
—
97.9
936.0
μs
—
5.9
220.8
ms
—
55.5
1336.4
ms
128-Kbyte
t_E128K
—
234.6 4908.5
—
(when all-
block erase
command
used)
Blank check time
8-byte
2-Kbyte
Erase operation forcible stop time
Start-up area switching setting time
Access window time
ROM mode transition wait time 1
ROM mode transition wait time 2
t_BC8
—
—
85.0
—
t_BC2K
—
—
1870.0
—
t_SED
—
—
28.0
—
t_SAS
—
13.0
573.3
—
t_AWS
—
13.0
573.3
—
t_DIS
2.0
—
—
2.0
t_MS
3.0
—
—
3.0
50.3
1130.1
ms
—
50.9
μs
—
401.5
μs
—
21.3
μs
7.7
450.1
ms
7.7
450.1
ms
—
—
μs
—
—
μs
Note:
Note:
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
The frequency accuracy of FCLK should be ±3.5%.
R01DS0248EJ0110 Rev.1.10
Jan 13, 2016
Page 87 of 98