M37517F8HP Datasheet, PDF (57/98 Pages) Renesas Technology Corp – SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

7517 Group
FLASH MEMORY MODE
Summary
Table 11 lists the summary of the M37517F8 (flash memory ver-
sion).
Table 11 Summary of M37517F8 (flash memory version)
Item
Specifications
Power source voltage
Vcc = 2.7– 5.5 V (Note 1)
Vcc = 2.7–3.6 V (Note 2)
VPP voltage (For Program/Erase)
4.5–5.5 V, f(XIN) = 8 MHz
Flash memory mode
3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)
Erase block division User ROM area
1 block (32 Kbytes)
Boot ROM area
1 block (4 Kbytes) (Note 3)
Program method
Byte program
Erase method
Batch erasing
Program/Erase control method
Program/Erase control by software command
Number of commands
6 commands
Number of program/Erase times
100 times
ROM code protection
Available in parallel I/O mode and standard serial I/O mode
Notes 1: The power source voltage must be Vcc = 4.5–5.5 V at program and erase operation.
2: The power source voltage can be Vcc = 3.0–3.6 V also at program and erase operation.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
rewritten in only parallel I/O mode.
Rev.1.01 Aug 02, 2004 page 57 of 96