HD6473258F10V Datasheet, PDF (213/301 Pages) Renesas Technology Corp – Hitachi Single-Chip Microcomputer

11.3 Programming
11.3.1 Selection of Sub-Modes in PROM Mode
(1) Case of H8/3257 and H8/3256
The write, verify, and other sub-modes of the PROM mode are selected as shown in table 11-4.
Table 11-4. Selection of Sub-Modes in PROM Mode
Sub-mode
Write
Verify
Programming
inhibited
CE
Low
Low
Low
Low
High
High
OE
High
Low
Low
High
Low
High
PGM
Low
High
Low
High
Low
High
Pins
VPP VCC
VPP VCC
VPP VCC
VPP VCC
E07 to E00
Data input
Data output
High-impedance
EA16 to EA0
Address input
Address input
Address input
Note: The VPP and VCC pins must be held at the VPP and VCC voltage levels.
The H8/3257 or H8/3256 PROM has the same standard read/write specifications as the HN27C101
EPROM. Page programming is not supported, however, so do not select page programming mode.
PROM writers that provide only page programming cannot be used. When selecting a PROM
writer, check that it supports the byte-at-a-time high-speed programming mode. Be sure to set the
address range to H’0000 to H’EFFF for the H8/3257, and to H’0000 to H’BFFF for the H8/3256.
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