NT3H2211W0FHKH Datasheet, PDF (53/77 Pages) NXP Semiconductors – NTAG I2C plus, NFC Forum Type 2 Tag compliant IC with I2C interface

NXP Semiconductors
NT3H2111/NT3H2211
NFC Forum Type 2 Tag compliant IC with I²C interface
In case the FAST_READ command starts with a valid memory area but extends over an
invalid memory area, the content of the invalid memory area will be reported as 00h.
The EndAddr parameter must be equal to or higher than the StartAddr.
Remark: The FAST_READ command is able to read out the entire memory of one sector
with one command. Nevertheless, the receive buffer of the NFC device must be able to
handle the requested amount of data as no chaining is possible.
10.10 WRITE
The WRITE command requires a page address, and writes 4 bytes of data into the
addressed NTAG I²C plus page. The WRITE command is shown in Figure 26 and
Table 31.
Table 32 shows the required timing.
NFC device Cmd Addr
NTAG ,,ACK''
Data
708 μs
NTAG ,,NAK''
CRC
T_ACK
T_NAK
ACK
57 μs
NAK
57 μs
NT3H2111/NT3H2211
Product data sheet
COMPANY PUBLIC
Time out
Fig 26. WRITE command
T_TimeOut
aaa-006990
Table 31.
Name
Cmd
Addr
Data
CRC
NAK
WRITE command
Code
A2h
-
-
-
see Table 17
Description
write one page
page address
data
CRC according to Ref. 1
see Section 10.3
Length
1 byte
1 byte
4 bytes
2 bytes
4 bit
Table 32. WRITE timing
These times exclude the end of communication of the NFC device.
WRITE
T_ACK/NAK min
n=9^[1]
T_ACK/NAK max
T_TimeOut
[1] Refer to Section 10.2 “Timing”.
T_TimeOut
5 ms
In the initial state of NTAG I²C plus, the following memory pages are valid Addr
parameters to the WRITE command:
• Page address from 02h to E9h(Sector 0) for NTAG I²C plus 1k and 2k
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 3 February 2016
359930
© NXP Semiconductors N.V. 2016. All rights reserved.
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