TDA8035HN Datasheet, PDF (23/32 Pages) NXP Semiconductors – Smart card interface externally by a resistor bridge

NXP Semiconductors
TDA8035HN
Smart card interface
Table 7. Characteristics of IC …continued
V_DDP = 3.3 V; V_DD(INTF) = 3.3 V; f_Xtal = 10 MHz; GND = 0 V; T_amb=25 °C; unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
T_sd
shutdown temperature at die
I_Olim
output current limit
on pin I/O
on pin CLK
-
150
−15
-
−70
-
on pin RST
−20
-
I_sd
Timings
shutdown current
on pin V_CC = 5 V or 1.8 V
on pin V_CC = 3 V
on pin V_CC = 5 V or 1.8 V
on pin V_CC = 3 V
90
125
90
160
80
115
80
150
t_act
t_deact
t_act
activation time
deactivation time
activation time
see Figure 8 on page 13
see Figure 9 on page 14
time of the window for sending CLK
to the card with XTAL1
1847
35
1992
-
90
2690
t_act(start)= t3; see Figure 8 on
page 13
2055
2766
t_act(end)=t5; see Figure 8 on
page 13
t_deb
debouncing time
on pin PRESN
2.96
4.05
Max
-
+15
+70
+20
160
260
150
250
3390
250
3653
3749
5.55
Unit
°C
mA
mA
mA
mA
mA
mA
mA
μs
μs
μs
μs
ms
[1] To meet these specifications, V_CC should be decoupled to CGND using two ceramic multilayer capacitors of low ESR with values of
either 220 nF.
[2] The transition time and the duty factor definitions are shown in Figure 12 on page 23.; d=t1/(t1+ t2)
[3] PRESN and CMDVCCN are active LOW; RSTIN is active HIGH; for CLKDIV1 and CLKDIV2 see Table 4.
t_r
90%
t_f
90%
10%
10%
t₁
t₂
Fig 12. Definition of output and input transition times
V_OH
(V_OH + V_OL) /2
V_OL
fce666
TDA8035HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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