TDA8035HN Datasheet, PDF (19/32 Pages) NXP Semiconductors – Smart card interface externally by a resistor bridge

NXP Semiconductors
TDA8035HN
Smart card interface
Table 7. Characteristics of IC …continued
V_DDP = 3.3 V; V_DD(INTF) = 3.3 V; f_Xtal = 10 MHz; GND = 0 V; T_amb=25 °C; unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
C_dec
decoupling capacitance connected on V_CC (220 nF +
396
-
220 nF 10 % )
V_o
output voltage
inactive mode; no load
−0.1
-
inactive mode; I_o = 1 mA
−0.1
-
I_o
output current
inactive mode &
-
-
at grounded pin V_CC
V_CC
supply voltage
active mode; 5 V card;
I_CC < 65 mA DC
4.75
5.0
active mode; 3 V card;
I_CC < 65 mA DC
2.85
3.05
active mode; 1.8 V card;
I_CC < 35 mA DC
1.71
1.83
active mode; current pulses
of 40 nAs with I_CC < 200 mA,
t < 400 ns; 5 V card
4.65
5.0
active mode; current pulses
of 40 nAs with I_CC < 200 mA,
t < 400 ns; 3 V card
2.76
-
active mode; current pulses
of 15 nAs with I_CC < 200 mA,
t < 400 ns;1.8 V card
1.66
-
V_ripple(p-p)
peak to peak ripple
voltage
from 20 kHz to 200 MHz
-
-
I_CC
supply current
V_CC = 0 V to 5 V, 3V
V_CC = 0 V to 1.8V
SR
slew rate
5 V card
-
-
-
-
0.055 0.18
3 V card
0.040 0.18
1.8 V card
0.025 0.18
Crystal oscillator (XTAL1 and XTAL2)
C_ext
external capacitance
connected on pins
-
-
XTAL1/XTAL2 (depending on
specification of crystal or
resonator used)
f_XTAL
f_XTAL1
crystal frequency
External frequency
applied on XTAL1
with 56 pF serial capacitor
2
-
0
-
V_IL
LOW-level input voltage
−0.3
-
V_IH
HIGH-level input voltage
0.7V_DD(IN -
TF)
Max
Unit
484
nF
+0.1
V
+0.3
V
−1
mA
5.25
V
3.15
V
1.89
V
5.25
V
3.20
V
1.94
V
350
mV
65
mA
35
mA
0.8
V/μs
0.8
V/μs
0.8
V/μs
33
pF
27
MHz
27
MHz
0.3
V
V_DD(INTF)
V_DD(INTF) V
+ 0.3
TDA8035HN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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