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| N25Q00AA11GSF40F Datasheet, PDF (52/89 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase | |||
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1Gb, 3V, Multiple I/O Serial NOR Flash Memory
READ MEMORY Operations
Figure 23: QUAD OUTPUT FAST READ Command â DTR
Extended
0
C
DQ0
DQ[2:1]
Command
MSB
High-Z
7
8
LSB
A[MAX]
Cx
A[MIN]
DOUT
LSB
DOUT DOUT DOUT
DOUT DOUT DOUT DOUT
DQ3
â1â
Quad
C
DQ[3:0]
0
1
2
MSB
Command
LSB
A[MAX]
Cx
A[MIN]
Dummy cycles
DOUT
MSB
DOUT DOUT DOUT
DOUT
MSB
LSB
DOUT DOUT DOUT
Dummy cycles
Notes:
1. Cx = 7 + (A[MAX] + 1)/2.
2. Shown here is the QUAD OUTPUT FAST READ timing for the extended SPI protocol. The
quad timing shown for the FAST READ command is the equivalent of the QUAD OUT-
PUT FAST READ timing for the quad SPI protocol.
Figure 24: QUAD INPUT/OUTPUT FAST READ Command â DTR
Extended
0
7
8
C
LSB
DQ0
Command
MSB
DQ[2:1]
High-Z
Cx
A[MIN]
LSB
DOUT DOUT DOUT DOUT
DOUT DOUT DOUT DOUT
Quad
DQ3
â1â
A[MAX]
DOUT
MSB
DOUT DOUT DOUT
C
DQ[3:0]
0
1
2
MSB
Command
LSB
A[MAX]
Notes: 1. Cx = 7 + (A[MAX] + 1)/8.
Dummy cycles
Cx
A[MIN]
Dummy cycles
DOUT
MSB
LSB
DOUT DOUT DOUT
PDF: 09005aef8480cede
n25q_1gb_3V_65nm.pdf - Rev. M 03/14 EN
52
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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