N25Q00AA11GSF40F Datasheet, PDF (24/89 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase

1Gb, 3V, Multiple I/O Serial NOR Flash Memory
Nonvolatile and Volatile Registers
Extended Address Register
In the case of 3-byte addressability mode, the device includes an extended address reg-
ister that provides a fourth address byte A[31:24], enabling access to memory beyond
128Mb. The extended address register bits [2:0] are used to select one of the eight
128Mb segments of the memory array.
Figure 8: Upper and Lower Memory Array Segments
07FFFFFFh
A[26:24] = 111
06FFFFFFh
07000000h
05FFFFFFh
06000000h
04FFFFFFh
A[26:24] = 110
A[26:24] = 101
05000000h
04000000h
A[26:24] = 100
03FFFFFFh
02FFFFFFh
03000000h
01FFFFFFh
02000000h
00FFFFFFh
01000000h
00000000h
A[26:24] = 011
A[26:24] = 010
A[26:24] = 001
A[26:24] = 000
The PROGRAM and ERASE operations act upon the 128Mb segment selected in the ex-
tended address register.
The READ operation begins reading in the selected 128Mb segment. It is bound by the
256Mb (die segment) to which the 128Mb segment belongs. In a continuos read, when
the last byte of the die segment selected is read, the next byte output is the first byte of
the same die segment; therefore, a download of the whole array is not possible with one
READ operation. The value of the extended address register does not change when a
READ operation crosses the selected 128Mb boundary.
PDF: 09005aef8480cede
n25q_1gb_3V_65nm.pdf - Rev. M 03/14 EN
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