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| N25Q00AA11GSF40F Datasheet, PDF (51/89 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase | |||
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1Gb, 3V, Multiple I/O Serial NOR Flash Memory
READ MEMORY Operations
Figure 21: DUAL OUTPUT FAST READ Command â DTR
Extended
C
DQ0
DQ1
Dual
C
DQ[1:0]
0
7
8
Command
MSB
High-Z
LSB
A[MAX]
0
3
4
Cx
A[MIN]
DOUT
LSB
DOUT DOUT DOUT DOUT DOUT DOUT DOUT
DOUT
MSB
DOUT DOUT DOUT DOUT DOUT DOUT DOUT
Dummy cycles
Cx
Command
MSB
LSB
A[MAX]
A[MIN]
DOUT
MSB
DOUT DOUT
DOUT DOUT
DOUT DOUT
LSB
DOUT
Dummy cycles
Notes:
1. Cx = 7 + (A[MAX] + 1)/2.
2. Shown here is the DUAL OUTPUT FAST READ timing for the extended SPI protocol. The
dual timing shown for the FAST READ command is the equivalent of the DUAL OUTPUT
FAST READ timing for the dual SPI protocol.
Figure 22: DUAL INPUT/OUTPUT FAST READ Command â DTR
Extended
C
0
7
8
LSB
DQ0
Command
MSB
Cx
A[MIN]
DOUT
LSB
DOUT DOUT DOUT DOUT DOUT DOUT DOUT
DQ1
Dual
C
DQ[1:0]
High-Z
A[MAX]
0
3
4
Cx
Dummy cycles
DOUT
MSB
DOUT DOUT DOUT DOUT DOUT DOUT DOUT
Command
MSB
LSB
A[MAX]
A[MIN]
Dummy cycles
DOUT
MSB
LSB
DOUT DOUT DOUT DOUT DOUT DOUT DOUT
Notes:
1. Cx = 7 + (A[MAX] + 1)/4.
2. Shown here is the DUAL INPUT/OUTPUT FAST READ timing for the extended SPI proto-
col. The dual timing shown for the FAST READ command is the equivalent of the DUAL
INPUT/OUTPUT FAST READ timing for the dual SPI protocol.
PDF: 09005aef8480cede
n25q_1gb_3V_65nm.pdf - Rev. M 03/14 EN
51
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
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