RFPIC12F675 Datasheet, PDF (94/136 Pages) Microchip Technology – FLASH-Based Microcontroller with ASK/FSK Transmitter

rfPIC12F675
13.5 DC Characteristics: rfPIC12F675-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40C  TA  +125C for extended
Param
No.
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020E
Power-down Current
(IPD)⁽³⁾
D021E
D022E
— 0.0011 3.5 A
— 0.0012 4.0 A
— 0.0022 8.0 A
— 0.3 6.0 A
— 1.8 9.0 A
— 8.4 20 A
— 58 70 A
2.0 WDT, BOD, Comparators, VREF, and
3.0 ^{T1OSC disabled}
5.0
2.0 WDT Current⁽¹⁾
3.0
5.0
3.0 BOD Current⁽¹⁾
D023E
D024E
D025E
— 109 130 A
— 3.3 10 A
— 6.1 13 A
— 11.5 24 A
— 58 70 A
— 85 100 A
— 138 165 A
— 4.0 10 A
— 4.6 12 A
5.0
2.0 Comparator Current⁽¹⁾
3.0
5.0
2.0 CVREF Current⁽¹⁾
3.0
5.0
2.0 T1 OSC Current⁽¹⁾
3.0
D026E
— 6.0 20 A
— 0.0012 6.0 A
5.0
3.0 A/D Current⁽¹⁾
— 0.0022 8.5 A
5.0
D027E Power-down RF Current — 0.050 TBD A
(IPDRF)⁽³⁾
3.0 RF Transmitter, RFEN=VSSRF
† Data in ‘Typ’ column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral  current can be determined by subtracting the base IDD or IPD current
from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
3: Total device current is the sum of IPD from VDD and IPDRF from VDDRF.
DS70091B-page 94
Preliminary
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