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RFPIC12F675 Datasheet, PDF (92/136 Pages) Microchip Technology – FLASH-Based Microcontroller with ASK/FSK Transmitter | |||
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rfPIC12F675
13.3 DC Characteristics: rfPIC12F675-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40ï°C ï£ TA ï£ +85ï°C for industrial
Param
No.
Device Characteristics
Min Typâ Max Units
VDD
Conditions
Note
D020
D021
D022
D023
D024
D025
D026
D027
Power-down Current
(IPD)(3)
â 0.99 700 nA
â 1.2 770 nA
2.0 WDT, BOD, Comparators, VREF, and
3.0 T1OSC disabled
â 2.9 995 nA
â 0.3 1.5 ïA
5.0
2.0 WDT Current(1)
â 1.8 3.5 ïA
3.0
â 8.4 17
ïA
5.0
â 58 70
ïA
3.0 BOD Current(1)
â 109 130 ïA
â 3.3 6.5 ïA
5.0
2.0 Comparator Current(1)
â 6.1 8.5 ïA
3.0
â 11.5 16
ïA
5.0
â 58 70
ïA
2.0 CVREF Current(1)
â 85 100 ïA
3.0
â 138 160 ïA
5.0
â 4.0 6.5 ïA
2.0 T1 OSC Current(1)
â 4.6 7.0 ïA
3.0
â 6.0 10.5 ïA
â 1.2 775 nA
5.0
3.0 A/D Current(1)
â 2.2 1.0 mA
5.0
Power-down RF Current
(IPDRF)(3)
â 0.050 TBD ïA
3.0 RF Transmitter with RFEN=0
â Data in âTypâ column is at 5.0V, 25ï°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral ï current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
3: Total device current is the sum of IPD from VDD and IPDRF from VDDRF.
DS70091B-page 92
Preliminary
ï£ 2003-2013 Microchip Technology Inc.
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