PIC16F1933_11 Datasheet, PDF (379/430 Pages) Microchip Technology – 28-Pin Flash-Based, 8-Bit CMOS Microcontrollers LCD Driver and nanoWatt XLP Technology

PIC16(L)F1933
30.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
Program Memory
Programming Specifications
D110 VIHH Voltage on MCLR/VPP/RE3 pin
8.0
—
9.0
V (Note 3, Note 4)
D111 IDDP Supply Current during
Programming
—
—
10
mA
D112
VDD for Bulk Erase
2.7
—
VDD
V
max.
D113 VPEW VDD for Write or Row Erase
VDD
min.
—
VDD
V
max.
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
D115 IDDPGM Current on VDD during Erase/Write
—
—
1.0
mA
5.0
mA
D116
D117
ED
VDRW
Data EEPROM Memory
Byte Endurance
VDD for Read/Write
D118
D119
TDEW Erase/Write Cycle Time
TRETD Characteristic Retention
D120 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
100K
VDD
min.
—
—
1M
—
— E/W -40C to +85C
—
VDD
V
max.
4.0
5.0
ms
40
— Year Provided no other
specifications are violated
10M
— E/W -40°C to +85°C
Program Flash Memory
D121 EP
Cell Endurance
10K
—
— E/W -40C to +85C (Note 1)
D122 VPR VDD for Read
VDD
min.
—
VDD
V
max.
D123 TIW Self-timed Write Cycle Time
—
2
2.5
ms
D124 TRETD Characteristic Retention
—
40
— Year Provided no other
specifications are violated
†
Note 1:
2:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
 2011 Microchip Technology Inc.
Preliminary
DS41575A-page 379