PIC16F631_08 Datasheet, PDF (237/306 Pages) Microchip Technology – 20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F631/677/685/687/689/690
17.2 DC Characteristics: PIC16F631/677/685/687/689/690-I (Industrial)
PIC16F631/677/685/687/689/690-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min. Typ† Max. Units
VDD
Conditions
Note
D020
Power-down Base
Current(IPD)⁽²⁾
—
0.05 1.2
μA
—
0.15 1.5
μA
2.0 WDT, BOR, Comparators, VREF and
3.0 ^{T1OSC disabled}
—
0.35 1.8
μA
5.0
D021
—
90
500
nA
—
1.0
2.2
μA
3.0 -40°C ≤ TA ≤ +25°C
2.0 WDT Current⁽¹⁾
—
2.0
4.0
μA
3.0
D022
—
3.0
7.0
μA
—
42
60
μA
5.0
3.0 BOR Current⁽¹⁾
D023
—
85
122
μA
—
32
45
μA
—
60
78
μA
5.0
2.0 Comparator Current⁽¹⁾, both
3.0 ^{comparators enabled}
D024
—
120 160
μA
—
30
36
μA
5.0
2.0 CVREF Current⁽¹⁾ (high range)
—
45
55
μA
3.0
D024a*
—
75
95
μA
—
39
47
μA
5.0
2.0 CVREF Current⁽¹⁾ (low range)
—
59
72
μA
3.0
—
98
124
μA
5.0
D025
—
2.0
5.0
μA
2.0 T1OSC Current, 32.768 kHz
—
2.5
5.5
μA
3.0
D026
—
3.0
7.0
μA
—
0.30 1.6
μA
—
0.36 1.9
μA
5.0
3.0 A/D Current⁽¹⁾, no conversion in
5.0 ^progress
D027
—
90
125
μA
3.0 VP6 Current
—
125 162
μA
5.0
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading
and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current
consumption.
3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can be extended
by the formula IR = VDD/2REXT (mA) with REXT in kΩ.
4: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is
enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max
values should be used when calculating total current consumption.
5: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with
the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
© 2008 Microchip Technology Inc.
DS41262E-page 235