PIC16F631_08 Datasheet, PDF (236/306 Pages) Microchip Technology – 20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F631/677/685/687/689/690
17.2 DC Characteristics: PIC16F631/677/685/687/689/690-I (Industrial)
PIC16F631/677/685/687/689/690-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min. Typ† Max. Units
VDD
Conditions
Note
D010 Supply Current (IDD)^{(1, 2)}
—
13
19
μA
—
22
30
μA
2.0 FOSC = 32 kHz
3.0 ^{LP Oscillator mode}
—
33
60
μA
5.0
D011*
—
140 240
μA
—
220 380
μA
2.0 FOSC = 1 MHz
3.0 ^{XT Oscillator mode}
—
380 550
μA
5.0
D012
—
260 360
μA
—
420 650
μA
2.0 FOSC = 4 MHz
3.0 ^{XT Oscillator mode}
—
0.8
1.1
mA
5.0
D013*
—
130 220
μA
—
215 360
μA
2.0 FOSC = 1 MHz
3.0 ^{EC Oscillator mode}
—
360 520
μA
5.0
D014
—
220 340
μA
—
375 550
μA
2.0 FOSC = 4 MHz
3.0 ^{EC Oscillator mode}
— 0.65 1.0
mA
5.0
D015
—
8
20
μA
—
16
40
μA
2.0 FOSC = 31 kHz
3.0 ^{LFINTOSC mode}
—
31
65
μA
5.0
D016*
—
340 450
μA
—
500 700
μA
2.0 FOSC = 4 MHz
3.0 ^{HFINTOSC mode}
—
0.8
1.2
mA
5.0
D017
—
410 650
μA
—
700 950
μA
2.0 FOSC = 8 MHz
3.0 ^{HFINTOSC mode}
— 1.30 1.65 mA
5.0
D018
—
230 400
μA
—
400 680
μA
2.0 FOSC = 4 MHz
3.0 ^{EXTRC mode(3)}
— 0.63 1.1
mA
5.0
D019
—
3.8
5.0
mA
—
4.0 5.45 mA
4.5 FOSC = 20 MHz
5.0 ^{HS Oscillator mode}
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading
and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current
consumption.
3: For RC oscillator configurations, current through REXT is not included. The current through the resistor can be extended
by the formula IR = VDD/2REXT (mA) with REXT in kΩ.
4: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is
enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max
values should be used when calculating total current consumption.
5: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with
the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41262E-page 234
© 2008 Microchip Technology Inc.