PIC16F627A_05 Datasheet, PDF (143/180 Pages) Microchip Technology – Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F627A/628A/648A
TABLE 17-1: DC Characteristics: PIC16F627A/628A/648A (Industrial, Extended)
PIC16LF627A/628A/648A (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial and
-40°C ≤ TA ≤ +125°C for extended
Operating voltage VDD range as described in DC specification
Table 17-2 and Table 17-3
Parameter
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Data EEPROM Memory
D120
D120A
D121
D122
D123
D124
ED Endurance
ED Endurance
VDRW VDD for read/write
100K
10K
VMIN
TDEW Erase/Write cycle time
—
TRETD Characteristic Retention
40
TREF Number of Total Erase/Write 1M
Cycles before Refresh⁽¹⁾
1M
100K
—
4
—
10M
— E/W -40°C ≤ TA ≤ 85°C
E/W 85°C ≤ TA ≤ 125°C
5.5
V VMIN = Minimum operating
voltage
8*
ms
— Year Provided no other
specifications are violated
— E/W -40°C to +85°C
Program Flash Memory
D130
D130A
D131
D132
D132A
D133
D133A
D134
EP Endurance
EP Endurance
VPR VDD for read
VIE VDD for Block erase
VPEW VDD for write
TIE Block Erase cycle time
TPEW Write cycle time
TRETP Characteristic Retention
10K
1000
VMIN
4.5
VMIN
—
—
40
100K
10K
—
—
—
4
2
—
— E/W -40°C ≤ TA ≤ 85°C
— E/W 85°C ≤ TA ≤ 125°C
5.5
V VMIN = Minimum operating
voltage
5.5
V
5.5
V VMIN = Minimum operating
voltage
8*
ms VDD > 4.5V
4*
ms
— year Provided no other
specifications are violated
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 13.7 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
© 2005 Microchip Technology Inc.
DS40044D-page 141