4082F Datasheet, PDF (16/23 Pages) Keysight Technologies – Flash Memory Cell Parametric Test System

16 | Keysight | 4082F Flash Memory Cell Parametric Test System – Data Sheet
Capacitance Measurement Subsystem
High-speed CMU (Capacitance measurement unit)
Measurement accuracy is speciied between any two measurement pins except the chuck connection pin.
Speciications
Measurement range
Measurement frequency
Test signal level
DC bias
Full-scale voltage range
Force accuracy
1 fF to 1.2 nF and 10 nS to 7.5 mS (1 MHz)
1 fF to 10 nF and 1 nS to 6.3 mS (100 kHz)
1 fF to 100 nF and 0.1 nS to 6.3 mS (10 kHz)
10 fF to 100 nF and 0.1 nS to 63 mS (1 kHz)
Setting range 1 kHz to 2 MHz (34 points)
Setting range 10 mV, 30 mV, 50 mV, and 100 mV
±10 V (Setting resolution: 1 mV)
±(0.1% of setting + 10 mV)
C/G measurement range, resolution, and accuracy
Frequency C range
C accuracy
±(% of reading + % of range)
2 MHz¹
7 pF
3.2% + [6.3 + (2.3 × Gm/88 μS)]%
70 pF
2.8% + [2.3 + (1.9 × Gm/880 μS)]%
1 MHz
10 pF¹
0.8% + [1.1 + (0.6 × Gm/63 μS)]%
100 pF
0.7% + [0.4 + (0.5 × Gm/630 μS)]%
1 nF
1.5% + [0.3 + (2.1 × Gm/6.3 mS)]%
100 kHz
10 pF¹
0.4% + [1.1 + (0.3 × Gm/6.3 μS)]%
100 pF
0.2% + [0.4 + (0.2 × Gm/63 μS)]%
1 nF
0.2% + [0.3 + (0.4 × Gm/630 μS)]%
10 nF
0.5% + [0.3 + (1.0 × Gm/6.3 mS)]%
10 kHz
100 pF
0.3% + [0.2 + (0.3 × Gm/6.3 μS)]%
1 nF
0.2% + [0.2 + (0.2 × Gm/63 μS)]%
10 nF
0.2% + [0.2 + (0.2 × Gm/630 μS)]%
1 kHz
100 nF
100 pF¹
0.3% + [0.2 + (1.0 × Gm/6.3 mS)]%
0.3% + [0.4 +(0.3 × Gm/0.63 μS)]%
1 nF
0.3% + [0.1 + (0.3 × Gm/6.3 μS )]%
10 nF
0.3% + [0.1 + (0.3 × Gm/63 μS)]%
100 nF
0.3% + [0.1 + (0.3 × Gm/630 μS)]%
G range
88 μS
880 μS
63 μS¹
630 μS
6.3 mS
6.3 μS¹
63 μS
630 μS
6.3 mS
6.3 μS
63 μS
630 μS
6.3 mS
0.63 μS¹
6.3 μS
63 μS
630 μS
G accuracy
±(% of reading + % of range)
3.2% + [6.5 + (2.5 × Cm/7 pF)]%
2.8% + [2.4 + (2.1 × Cm/70 pF)]%
0.8% + [1.1 + (0.6 × Cm/10 pF)]%
0.7% + [0.4 + (0.5 × Cm/100 pF)]%
1.5% + [0.3 + (2.2 × Cm/1 nF)]%
0.4% + [1.1 + (0.4 × Cm/10 pF)]%
0.2% + [0.4 + (0.2 × Cm/100 pF)]%
0.2% + [0.3 + (0.4 × Cm/1 nF)]%
0.5% + [0.3 + (1.0 × Cm/10 nF)]%
0.3% + [0.2 + (0.3 × Cm/100 pF)]%
0.2% + [0.2 + (0.2 × Cm/1 nF)]%
0.2% + [0.2 + (0.2 × Cm/10 nF)]%
0.7% + [0.2 + (0.7 × Cm/100 nF)]%
0.3% + [0.4 + (0.3 × Cm/100 pF)]%
0.3% + [0.1 + (0.3 × Cm/1 nF)]%
0.3% + [0.1 + (0.3 × Cm/10 nF)]%
0.3% + [0.1 + (0.3 × Cm/100 nF)]%
1. Supplemental characteristics
Gm: Measured conductance
Cm: Measured capacitance
Conductance and capacitance measurements are speciied under the following conditions:
Measurement frequency: 1 kHz, 10 kHz, 100 kHz, or 1 MHz
Integration time: MEDIUM or LONG
Test signal level: 30 mVrms
Stray capacitance: Must be under 5 pF between force and guard
Calibration and offset cancel: Speciications are valid for the data after calibration data measurement and offset cancel.
Capacitance measurement accuracy of HSCMU may be affected by conducted RF ield strength over 3 Vrms at frequency range of 1 MHz to 20 MHz.