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| ISL70003SEH Datasheet, PDF (27/32 Pages) Intersil Corporation – Acceptance tested to 50krad | |||
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ISL70003SEH
Package Characteristics
Weight of Packaged Device
1.43 Grams (typical) - R64.A Package
2.65 Grams (typical) - R64.C Package
Lid Characteristics
Finish: Gold
Lid Potential: PGND
Die Characteristics
Die Dimensions
8300µm x 8300µm (327 mils x 327 mils)
Thickness: 300µm ±25.4µm (12 mils ±1 mil)
Interface Materials
GLASSIVATION
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ±0.03µm to 1.2µm ±0.12µm
Metallization Mask Layout
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
BACKSIDE FINISH
Silicon
PROCESS
0.6µM BiCMOS Junction Isolated
ASSEMBLY RELATED INFORMATION
Substrate and Lid Potential
PGND
ADDITIONAL INFORMATION
Worst Case Current Density
<2 x 105 A/cm2
Transistor Count
26,144
ISL70003SEH
PVIN2
LX2
PGND2
PGND1
LX1
PVIN1
IMON
SGND
OCSETA
OCSETB
BUFIN+
BUFIN-
BUFOUT
VREF
ORIGIN
Submit Document Feedback 27
DE
PVIN9
LX9
PGND9
PGND10
LX10
PVIN10
SEL2
SEL1
PGOOD
GND
GND
GND
GND
GND
FN8604.5
May 12, 2016
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