DT28F160S570 Datasheet, PDF (49/51 Pages) Intel Corporation – 5 VOLT FlashFile™ MEMORY

E
28F160S5/28F320S5
6.7 Erase, Write, and Lock-Bit Configuration Performance^{(3, 4)}
5 V ± 5%, 5 V ± 10% VCC
#
W16
W16
W16
W16
W16
Sym
tWHQV1
tEHQV1
tWHQV1
tEHQV1
Version
Parameter
Byte/word program time (using write buffer)
Per byte program time (without write buffer)
Per word program time (without write buffer)
Block program time (byte mode)
Block program time (word mode)
5 V VPP
Notes Typ⁽¹⁾ Max⁽⁶⁾ Units
5
2 TBD µs
2 9.24 90.0 µs
2 9.24 90.0 µs
2
0.5 1.0 sec
2 0.38 0.5 sec
W16
Block program time (using write buffer)
2 0.13 TBD sec
W16
tWHQV2
tEHQV2
Block erase time
2 0.34 3.5 sec
W16
Full chip erase time
16 Mbit
10.7 112 sec
32 Mbit
21.4 224 sec
W16
tWHQV3
tEHQV3
Set Lock-Bit time
2 9.24 90.0 µs
W16
tWHQV4
tEHQV4
Clear block lock-bits time
2 0.34 3.5 sec
W16
tWHRH1
tEHRH1
Program suspend latency time to read
5.6
7
µs
W16
tWHRH2
tEHRH2
Erase suspend latency time to read
9.4 13.1 µs
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
5. Uses whole buffer.
6. Maximum values represent less than 1% of units exposed to greater than 100K cycles
PRELIMINARY
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