DT28F160S570 Datasheet, PDF (42/51 Pages) Intel Corporation – 5 VOLT FlashFile™ MEMORY

28F160S5/28F320S5
E
6.4 DC Characteristics (Continued)
TA = –40 ^oC to +85 ^oC (Extended) and TA = 0 °C to +70 °C (Commercial)
Sym
Parameter
Notes Min Max Unit
Conditions
V_IL
Input Low Voltage
V_IH Input High Voltage
7 –0.5 0.8
V
7
2.0 VCC + V
0.5
V_OL Output Low Voltage
3,7
0.45
V V_CC = V_CC Min
I_OL = 5.8 mA
V_OH1 Output High Voltage (TTL)
3,7 2.4
V V_CC = V_CC Min
I_OH = –2.5 mA
V_OH2 Output High Voltage (CMOS)
3,7 0.85 ×
VCC
V V_CC = V_CC Min
I_OH = –2.5 mA
VCC –
0.4
V V_CC = V_CC Min
I_OH = –100 µA
V_PPLK V_PP Lockout Voltage
4,7
1.5
V
V_PPH V_PP Voltage
4
4.5 5.5
V
V_LKO V_CC Lockout Voltage
8
2.0
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC voltage and TA = +25 °C. These currents are
valid for all product versions (packages and speeds).
2. ICCWS and ICCES are specified with the device de-selected. If read or programmed while in erase suspend mode, the
device’s current is the sum of ICCWS or ICCES and ICCR or ICCW.
3. Includes STS in level RY/BY# mode.
4. Block erase, program, and lock-bit configurations are inhibited when VPP ≤ VPPLK. Block erase, program, and lock-bit
configurations are not guaranteed between VPPLK (max) and VPPH (min) nor above VPPH (max).
5. Automatic Power Savings (APS) reduces typical ICCR to 1 mA at 5 V VCC static operation.
6. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
7. Sampled, not 100% tested.
8. With VCC ≤ VLKO flash memory writes are inhibited.
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PRELIMINARY