DT28F160S570 Datasheet, PDF (32/51 Pages) Intel Corporation – 5 VOLT FlashFile™ MEMORY

28F160S5/28F320S5
E
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
0
SR.7 =
1
Full Status
Check if Desired
Bus
Operation
Write
Write
Command
Comments
Setup Byte/ Data = 40H
Word Program Addr = Location to Be Programmed
Byte/Word
Program
Data = Data to Be Programmed
Addr = Location to Be Programmed
Read
Status Register Data
No
Suspend Byte/
Word Program
Loop
Suspend
Byte/Word
Program
Yes
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent programming operations.
SR full status check can be done after each program operation, or
after a sequence of programming operations.
Write FFH after the last program operation to place device in read
array mode.
Byte/Word
Program Complete
FULL STATUS CHECK PROCEDURE
Read Status
Register Data
(See Above)
SR.3 =
1
Voltage Range Error
0
SR.1 =
1
Device Protect Error
0
1
SR.4 =
Programming Error
0
Byte/Word
Program
Successful
Bus
Operation
Command
Comments
Standby
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect Detect
RP# = V_IH, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
Standby
Check SR.4
1 = Programming Error
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0609_07
Figure 7. Single Byte/Word Program Flowchart
32
PRELIMINARY