DT28F160S570 Datasheet, PDF (13/51 Pages) Intel Corporation – 5 VOLT FlashFile™ MEMORY

E
28F160S5/28F320S5
Table 2. Bus Operations
Mode
Read
Output Disable
Standby
Reset/Power-
Down Mode
Notes
1,2
10
RP#
VIH
VIH
VIH
V_IL
CE0#
V_IL
V_IL
V_IL
V_IH
V_IH
X
CE1# OE#⁽¹¹⁾ WE#⁽¹¹⁾
V_IL
V_IL
V_IH
V_IL
V_IH
V_IH
V_IH
X
X
V_IL
V_IH
X
X
X
Address
X
X
X
X
V_PP
DQ⁽⁸⁾ STS⁽³⁾
X
D_OUT
X
X
High Z
X
X
High Z
X
X
High Z High Z⁽⁹⁾
Read Identifier
4
VIH
V_IL
V_IL
V_IL
V_IH
See
Codes
Figure 5
X
DOUT High Z⁽⁹⁾
Read Query
5
VIH
V_IL
V_IL
V_IL
V_IH See Table 6
X
DOUT High Z⁽⁹⁾
Write
3,6,7 VIH V_IL
V_IL
V_IH
V_IL
X
VPPH
D_IN
X
NOTES:
1. Refer to DC Characteristics. When VPP ≤ VPPLK, memory contents can be read, but not altered.
2. X can be VIL or VIH for control and address input pins and VPPLK or VPPH for VPP. See DC Characteristics, for VPPLK and
VPPH voltages.
3. STS in RY/BY# mode (default) is VOL when the WSM is executing internal block erase, programming, or lock-bit
configuration algorithms. It is VOH when the WSM is not busy, in block erase suspend mode (with programming inactive),
program suspend mode, or deep power-down mode.
4. See Section 4.3 for read identifier code data.
5. See Section 4.2 for read query data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when VPP = VPPH and
VCC = VCC1/2 (see Section 6.2).
7. Refer to Table 3 for valid DIN during a write operation.
8. DQ refers to DQ0–7 if BYTE# is low and DQ0–15 if BYTE# is high.
9. High Z will be VOH with an external pull-up resistor.
10. RP# at GND ± 0.2 V ensures the lowest deep power-down current.
11. OE# = VIL and WE# = VIL concurrently is an undefined state and should not be attempted.
PRELIMINARY
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